DocumentCode
3448430
Title
High-Performance Thin-Film Multijunction Thermal Converter Developed at AIST
Author
Fujiki, H. ; Kasai, N. ; Sasaki, H. ; Shoji, A. ; Nakano, S. ; Nishiya, N. ; Hidaka, S.
Author_Institution
National Inst. of Adv. Ind. Sci. & Technol., Ibaraki
fYear
2004
fDate
38139
Firstpage
459
Lastpage
460
Abstract
For wide spread distribution of multijunction thermal converters (MJTCs), thin film MJTCs with a novel structure have been developed. In order to reduce the effect of thermal ripples to the output voltage for MJTCs, the authors introduced an AlN chip under a Cu electrode on which Bi/Sb thermocouples are integrated. The thermoelectric transfer difference of the new MJTCs was evaluated to be less than 0.2 muV/V and their ac-dc differences was measured to be less than 10 muV/V in the frequency range from 10 Hz up to 1 MHz. The maximum output EMF for developed MJTCs was 35 mV
Keywords
AC-DC power convertors; aluminium compounds; antimony alloys; bismuth alloys; copper; thermocouples; thermoelectric conversion; thin film devices; voltage measurement; 10 to 1E6 Hz; 35 mV; AIST; AlN; Bi-Sb; Cu; ac-dc difference measurement; copper electrode; high-performance multijunction thermal converter; semiconductor chip; thermal ripples reduction; thermocouples; thermoelectric transfer difference; thin-film multijunction thermal converter; Analog-digital conversion; Bismuth; Capacitance; Electrodes; Frequency; Heat transfer; Resistance heating; Thermoelectricity; Transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 2004 Conference on
Conference_Location
London
Print_ISBN
0-7803-8494-6
Electronic_ISBN
0-7803-8494-6
Type
conf
DOI
10.1109/CPEM.2004.305309
Filename
4097320
Link To Document