Ultra-fast laser-induced recrystallization of amorphous silicon films

Summary form only given. The pulsed laser-induced recrystallization of thin semiconductor films on amorphous substrates can have major potential applications in the fabrication of thin film transistors (TFTs) for high definition active matrix liquid displays. For nanosecond pulses, the process is driven by rapid melting and resolidification. The associated heat transfer and phase-change thermodynamics have been studied by a variety of in situ diagnostics?? of nanosecond temporal resolution, including time-resolved optical transmission, reflection, multi-wavelength emission, and transient electrical conductance measurements.