Deposition of CuInAlSe2 films using co-sputtered precursors and selenization

Author

Dwyer, Daniel ; Repins, Ingrid ; Efstathiadis, Harry ; Haldar, Pradeep

Author_Institution

Coll. of Nanoscale Sci. & Eng., SUNY - Univ. at Albany, Albany, NY, USA

fYear

2009

fDate

7-12 June 2009

Abstract

CuInAl precursor films with varying Al/(Al+In) ratios were co-sputtered onto Mo coated soda-lime glass substrates. Samples were then selenized under high vacuum using thermally evaporated elemental selenium. Single-step and two-step selenization heating profiles were investigated. Single-step samples resulted in better Mo-CuInAlSe₂ adhesion than those selenized using the two-step approach. Precursor and selenized films were characterized for composition, crystalline structure, surface morphology, and composition with depth. The development of a method to co-sputtered CuInAl precursors is discussed, as well as the effect of selenization temperature and heating profile on selenized film properties.

Keywords

aluminium compounds; copper compounds; crystal structure; heat treatment; indium compounds; semiconductor growth; sputter deposition; surface morphology; ternary semiconductors; CuInAlSe₂; Mo-Na₂O-CaO-SiO₂; Na₂O-CaO-SiO₂; co-sputtering; crystalline structure; films; heating; selenization; soda-lime glass substrates; surface morphology; Crystallization; Gallium; Glass; Heating; Indium; Lattices; Photonic band gap; Sputtering; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Conference_Location

Philadelphia, PA

ISSN

0160-8371

Print_ISBN

978-1-4244-2949-3

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2009.5411687

Filename

5411687