Strong emission from selectively-grown GaN quantum dots

Summary form only given. GaN-based quantum dots (QDs) have attracted much attention because the lasers with GaN-based QDs embedded in the active layer have lower threshold currents and narrower emission spectra at shorter wavelengths. In this paper, we demonstrate the fabrication and optical properties of selectively-grown GaN QDs for the first time. The photoluminescence (PL) was investigated from 5 to 300 K. The observation of high intensity PL from GaN QDs at room temperature indicates the strong confinement of carriers in the QDs.