Layer transfer of Cu(In,Ga)Se2 thin-film to alternative substrate and application to solar cells

Author

Minemoto, T. ; Anegawa, T. ; Osada, S. ; Takakura, H.

Author_Institution

Ritsumeikan Global Innovation Res. Organ., Ritsumeikan Univ., Kusatsu, Japan

fYear

2009

fDate

7-12 June 2009

Abstract

To widen the variety of substrate choice of Cu(In, Ga)Se₂ (CIGS) solar cells, a lift off process was developed without an intentional sacrifice layer between CIGS and Mo back contact layers. CIGS films grown on Mo/glass substrates were transferred to alternative substrates of glass and polyimide. Based on the transferred CIGS films, deices with ITO/ZnO/CdS/CIGS/Mo/epoxy/alternative-substrates structure were fabricated. Both solar cells showed almost half values of efficiencies compared to a CIGS solar cell fabricated with a standard process. Modifications on a back contact property and a composition profile of the CIGS layer will improve the device performance of the lift-off cells.

Keywords

II-VI semiconductors; aluminium; cadmium compounds; copper compounds; gallium compounds; indium compounds; molybdenum; semiconductor thin films; solar cells; ternary semiconductors; thin film devices; tin compounds; wide band gap semiconductors; zinc compounds; CIGS; ITO-ZnO-CdS-CIGS-Mo; back contact layers; composition profile; intentional sacrifice layer; lift off process; solar cells; thin film; Current measurement; Glass; Indium tin oxide; Photovoltaic cells; Plastic films; Polyimides; Polymer films; Substrates; Transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Conference_Location

Philadelphia, PA

ISSN

0160-8371

Print_ISBN

978-1-4244-2949-3

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2009.5411694

Filename

5411694