DocumentCode
3448848
Title
Proceedings of ISPSD´94 International Symposium on Power Semiconductor Devices and IC´s
fYear
1994
fDate
May 31 1994-June 2 1994
Abstract
The following topics were dealt with: thyristor; IGBT; power FETs; SOI; bipolar power devices; MOS-gated thyristors; smart power IC; power MOSFET; HF devices
Keywords
power semiconductor devices; HF devices; IGBT; MOS-gated thyristors; SOI; bipolar power devices; power FETs; power MOSFET; power semiconductor devices; smart power IC; thyristor;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location
Davos, Switzerland
ISSN
1063-6854
Print_ISBN
0-7803-1494-8
Type
conf
DOI
10.1109/ISPSD.1994.583612
Filename
583612
Link To Document