TCAD for bipolar process development: a user´s perspective

Author

Voorde, Paul Vande

Author_Institution

Hewlett Packard Corp., Palo Alto, CA, USA

fYear

1991

fDate

9-10 Sep 1991

Firstpage

101

Lastpage

109

Abstract

The author reviews the use of public domain TCAD tools (SUPREM and PISCES) for advanced bipolar process development. The simulators are utilized for device design and optimization, sensitivity analysis, and AC and DC parameter extraction. The various bipolar parameters that can be obtained from simulation are discussed. PISCES has been enhanced to model Si_1-xGe_x heterojunction bipolar device structures. Some preliminary simulations of SiGe structures are presented

Keywords

CAD; Ge-Si alloys; bipolar integrated circuits; electronic engineering computing; heterojunction bipolar transistors; integrated circuit technology; semiconductor device models; semiconductor materials; sensitivity analysis; AC parameter extraction; DC parameter extraction; HBT modelling; PISCES; SUPREM; SiGe structures; bipolar process development; device design; heterojunction bipolar device; optimization; public domain TCAD tools; sensitivity analysis; Analytical models; Circuit optimization; Circuit simulation; Design optimization; Fabrication; Germanium silicon alloys; Heterojunctions; Process design; SPICE; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0103-X

Type

conf

DOI

10.1109/BIPOL.1991.160966

Filename

160966