Next generation power module

Author

Yamada, T. ; Majumdar, G. ; Mori, S. ; Hagino, H. ; Kondoh, H. ; Hirao, T.

Author_Institution

Fukoka Works, Mitsubishi Electr. Corp., Fukoka, Japan

fYear

1994

fDate

31 May-3 Jun 1994

Firstpage

3

Lastpage

8

Abstract

A brief history of power semiconductors, starting from its bipolar based origin to the state-of-art Intelligent Power Modules (IPMs), has been briefly reviewed at first, and is followed by an analysis of the changing requirements from the application fields. In accordance with it, next generation IPMs with new concepts have been proposed. The next generation IPMs are expected to grow in two specific directions. One is a growth toward a high power zone where performance enhancement by use of new IGBT structure and additional protection would be essential. Second is a growth toward low power zone where an ASIC-like system integration approach by use of new HVICs and packaging would be essential

Keywords

power integrated circuits; HVICs; IGBT structure; high power zone; high-voltage ICs; intelligent power module; low power zone; packaging; power semiconductors; Cities and towns; History; Insulated gate bipolar transistors; Inverters; Multichip modules; Packaging; Power electronics; Power semiconductor devices; Protection; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on

Conference_Location

Davos

ISSN

1063-6854

Print_ISBN

0-7803-1494-8

Type

conf

DOI

10.1109/ISPSD.1994.583616

Filename

583616