Title :
Advanced power module using GaAs semiconductors, metal matrix composite packaging material, and low inductance design
Author :
Anderson, Samuel ; Berringer, Ken ; Romero, Guillermo
Author_Institution :
Semicond. Products Sector, Motorola Inc., Phoenix, AZ, USA
fDate :
31 May-3 Jun 1994
Abstract :
Power modules for high power applications employing silicon based semiconductors are limited to low frequency operation and have some inherent reliability limitations. A 400 amp 600 volt power module has been designed using new technologies to overcome these limitations. Gallium arsenide based semiconductors provide efficient high frequency operation. Low inductance techniques are used in the package design to enable high frequency operation. Silicon carbide metal matrix composite materials are used to provide reliable packaging and thermal management of GaAs and silicon devices
Keywords :
gallium arsenide; 400 A; 600 V; GaAs; GaAs semiconductors; HF operation; SiC; high frequency operation; high power applications; low inductance design; metal matrix composite packaging material; power module; thermal management; Composite materials; Frequency; Gallium arsenide; Inductance; Materials reliability; Multichip modules; Semiconductor device packaging; Semiconductor device reliability; Silicon carbide; Thermal management;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583629
