Title :
A new IGBT with a monolithic over-current protection circuit
Author :
Seki, Yasukazu ; Harada, Yuichi ; Iwamuro, Noriyuki ; Kumagai, Naoki
Author_Institution :
Adv. Device Technol. Lab., Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan
fDate :
31 May-3 Jun 1994
Abstract :
A new IGBT structure with a monolithic overcurrent sensing and protection circuit has been developed. The feature of this device is a novel integration of a sensing and protection circuit which consists of a sensing IGBT, lateral n-MOSFET, polycrystalline silicon diode and resistor with an IGBT structure. The conventional IGBT fabrication process is available to this device with only one more photomask. Comparison of not only a short circuit safe operating area but both a trade-off characteristics between an on-state voltage drop and a turn-off loss and reverse biased safe operating area with a conventional IGBT has been investigated. Since exhibiting a large short circuit safe operating area without deterioration of any other device characteristics, this device can be applied to not only a soft switching application like voltage resonant circuit but a hard switching application like snubberless inductive load circuit
Keywords :
power integrated circuits; IGBT fabrication process; IGBT structure; Si; hard switching application; lateral n-MOSFET; monolithic overcurrent protection circuit; onstate voltage drop; polycrystalline Si diode; reverse biased SOA; safe operating area; sensing IGBT; short circuit SOA; snubberless inductive load circuit; soft switching application; turnoff loss; voltage resonant circuit; Diodes; Fabrication; Insulated gate bipolar transistors; MOSFET circuits; Protection; RLC circuits; Resistors; Silicon; Switching circuits; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583634
