DocumentCode :
3449180
Title :
1.55 /spl mu/m transmission through planar photonic-crystal straight guides and ultrashort bends on InP substrate
Author :
Talneau, A. ; Le Gouezigou, L. ; Bouadma, N.
fYear :
2001
fDate :
11-11 May 2001
Firstpage :
263
Abstract :
Summary form only given. Highly efficient waveguiding by a 2D photonic crystal at 1.55 /spl mu/m has been demonstrated for straight guides and bends. Our experiments concern structures etched through a 500 nm thick GaInAsP confining layer lying on InP substrate. This approach has the potential to allow integration with active devices. For ultra-compact photonic integrated circuits (PIC), ultrashort bends are a prerequisite. We investigate the spectral behaviour around 1.55 /spl mu/m of channel guides formed by removing 2 or 3 rows in a triangular 2D photonic crystal with a period a = 450 nm. Double-60/spl deg/ bends with 1 and 3 holes displaced in each corner have been fabricated and measured.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical fabrication; optical planar waveguides; optical testing; photonic band gap; substrates; 1.55 micron; 2D photonic crystal; 500 nm; GaInAsP confining layer; GaInAsP-InP; InP; InP substrate; active devices; bends; channel guides; double-60/spl deg/ bends; fabrication; highly efficient waveguiding; integration; planar photonic-crystal straight guides; spectral behaviour; straight guides; triangular 2D photonic crystal; ultra-compact photonic integrated circuits; ultrashort bends; Attenuation; Educational institutions; Etching; Laboratories; Length measurement; Loss measurement; Microcavities; Propagation losses; Semiconductor waveguides; Waveguide components;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
Type :
conf
DOI :
10.1109/CLEO.2001.947783
Filename :
947783
Link To Document :
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