Title :
Modeling concepts for modern semiconductor devices
Author :
Kosina, H. ; Simlinger, Th
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Austria
Abstract :
As semiconductor technology continues to evolve, numerical modeling of the electrical device behavior is becoming increasingly important. In this contribution, results of a two-dimensional transient simulation of a charge-coupled device are presented. A hydrodynamic model suitable to describe the high electron mobility transistor is presented as well as simulation results. The concepts underlying the simulation of these rather complex devices are briefly discussed. Models for mobility and heat flux are critically reviewed
Keywords :
carrier mobility; charge-coupled devices; high electron mobility transistors; numerical analysis; semiconductor device models; thermal analysis; transient analysis; CCD; HEMT; charge-coupled device; heat flux; high electron mobility transistor; hydrodynamic model; mobility; numerical modeling; semiconductor devices; two-dimensional transient simulation; Boundary conditions; Circuit simulation; Differential equations; Geometry; Iterative algorithms; Linear systems; Poisson equations; Semiconductor devices; Solid modeling; Stability;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494859
