Title :
The effect of ZnO replacement by ZnMgO ON ZnO/CdS/Cu(In,Ga)Se2 solar cells
Author :
Li, Jian V. ; Li, Xiaonan ; Kanevce, Ana ; Yan, Yanfa ; Repins, Ingrid
Author_Institution :
Nat. Center of Photovoltaics, Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
We studied the electrical properties and device performance of the Cu(In,Ga)Se2 solar cell when i-ZnO is replaced by i-ZnMgO. Admittance spectroscopy reveals a deep level attributed to the i-ZnMgO/CdS interface. The capacitance voltage experiment indicates a pronounced reduction of carrier concentration in the p-CIGS absorber. Inserting a thin i-ZnO layer between i-ZnMgO and CdS completely removes the detrimental effect of the interface states and partially reverts the carrier concentration reduction effect. Device simulations indicate that the open circuit voltage is lowered due to the carrier concentration reduction while the fill factor is sensitive to the defects at the interface.
Keywords :
II-VI semiconductors; cadmium compounds; carrier density; copper compounds; electric properties; gallium compounds; magnesium compounds; solar cells; ternary semiconductors; wide band gap semiconductors; zinc compounds; ZnMgO-CdS; ZnO-CdS-CuInGaSe; admittance spectroscopy; capacitance voltage experiment; carrier concentration reduction; electrical properties; open circuit voltage; p-CIGS absorber; solar cells; Glass; Laboratories; Optical buffering; Optical films; Optical materials; Photonic band gap; Photovoltaic cells; Sputtering; Windows; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411716
