The effect of ZnO replacement by ZnMgO ON ZnO/CdS/Cu(In,Ga)Se2 solar cells

Author

Li, Jian V. ; Li, Xiaonan ; Kanevce, Ana ; Yan, Yanfa ; Repins, Ingrid

Author_Institution

Nat. Center of Photovoltaics, Nat. Renewable Energy Lab., Golden, CO, USA

fYear

2009

fDate

7-12 June 2009

Abstract

We studied the electrical properties and device performance of the Cu(In,Ga)Se₂ solar cell when i-ZnO is replaced by i-ZnMgO. Admittance spectroscopy reveals a deep level attributed to the i-ZnMgO/CdS interface. The capacitance voltage experiment indicates a pronounced reduction of carrier concentration in the p-CIGS absorber. Inserting a thin i-ZnO layer between i-ZnMgO and CdS completely removes the detrimental effect of the interface states and partially reverts the carrier concentration reduction effect. Device simulations indicate that the open circuit voltage is lowered due to the carrier concentration reduction while the fill factor is sensitive to the defects at the interface.

Keywords

II-VI semiconductors; cadmium compounds; carrier density; copper compounds; electric properties; gallium compounds; magnesium compounds; solar cells; ternary semiconductors; wide band gap semiconductors; zinc compounds; ZnMgO-CdS; ZnO-CdS-CuInGaSe; admittance spectroscopy; capacitance voltage experiment; carrier concentration reduction; electrical properties; open circuit voltage; p-CIGS absorber; solar cells; Glass; Laboratories; Optical buffering; Optical films; Optical materials; Photonic band gap; Photovoltaic cells; Sputtering; Windows; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Conference_Location

Philadelphia, PA

ISSN

0160-8371

Print_ISBN

978-1-4244-2949-3

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2009.5411716

Filename

5411716