GaInNAs VCSEL structure as a modelocking element for a 1.3 /spl mu/m Nd:YVO/sub 4/ laser

Author

Vysniauskas, G. ; Hetterich, M. ; Macaluso, R. ; Burns, D. ; Dawson, M.D. ; Bente, E. ; Egorov, A.Y. ; Riechert, H.

Author_Institution

Inst. of Photonics, Strathclyde Univ., Glasgow, UK

fYear

2001

fDate

11-11 May 2001

Firstpage

267

Abstract

Summary form only given. In this paper we present recent results obtained on passive modelocking of a Nd:YVO/sub 4/ laser operating at 1342 nm using a semiconductor saturable absorber mirror (SESAM) using the novel semiconductor material system GaInNAs/GaAs. This material system has been receiving considerable attention in the development of laser diodes operating at the 1.3 /spl mu/m optical fiber window. A principal advantage of GaInNAs is that it can be conveniently grown on GaAs which enables the use of high refractive index contrast AlGaAs-based distributed Bragg reflectors that provide a good bandwidth and simplifies manufacture.

Keywords

III-V semiconductors; Q-switching; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; laser mode locking; neodymium; optical saturable absorption; quantum well lasers; solid lasers; surface emitting lasers; 1342 nm; GaInNAs; Nd:YVO/sub 4/ laser; Q-switched operation; SESAM; VCSEL structure; YVO/sub 4/:Nd; distributed Bragg reflectors; high refractive index contrast; passive modelocking; quantum-wells; Diode lasers; Fiber lasers; Gallium arsenide; Laser modes; Mirrors; Optical fibers; Optical materials; Semiconductor lasers; Semiconductor materials; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.947787

Filename

947787