Title :
Modelling and performance of vertical trench MOSFET in power electronics
Author :
Morancho, F. ; Tranduc, H. ; Rossel, P. ; Charitat, G.
Author_Institution :
Lab. d´´Anal. et d´´Archit. des Syst., CNRS, Toulouse, France
Abstract :
In this paper, a family of SPICE models is proposed for the recently developed trench power MOSFET. Our modeling and parameter extraction approach is based on an analytical study, on two-dimensional device simulations and on experimental characterisation. Then, it is shown that regarding the total power losses, the trench MOSFET could be a device of choice, compared with classical high cell density vertical DMOSFET
Keywords :
SPICE; equivalent circuits; losses; power MOSFET; semiconductor device models; SPICE models; parameter extraction; power electronics; total power losses; two-dimensional device simulations; vertical trench MOSFET; Capacitance; Circuit simulation; Electric breakdown; MOSFET circuits; Performance loss; Power MOSFET; Predictive models; SPICE; Semiconductor device modeling; Switches;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494862
