Title :
Pumping Single Electrons Through a Laterally Defined Quantum Dot using Surface Acoustic Waves
Author :
Fletcher, N.E. ; Ebbecke, J. ; Janssen, T.J.B.M. ; Ahlers, F.J.
Author_Institution :
National Phys. Lab., Teddington
Abstract :
We present a new realization of quantized charge pumping operating at 3 GHz. Surface acoustic waves on a GaAs/AlGaAs heterostructure are used to pump electrons through a quantum dot defined by metallic split gates. The current quantization is determined by the electronic states of the dot
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor quantum dots; single electron devices; surface acoustic waves; tunnelling; 3 GHz; GaAs-AlGaAs; metallic split gates; pump electrons; quantized charge pumping; quantum dot; single electrons; surface acoustic waves; Acoustic waves; Electrons; Gallium arsenide; Quantization; Quantum capacitance; Quantum dots; Surface acoustic waves; Transducers; US Department of Transportation; Voltage;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2004 Conference on
Conference_Location :
London
Print_ISBN :
0-7803-8494-6
Electronic_ISBN :
0-7803-8494-6
DOI :
10.1109/CPEM.2004.305353
