• DocumentCode
    3449286
  • Title

    Analysis of the field emitter triode (FET) as a pressure sensor

  • Author

    Nicolaescu, Dan

  • Author_Institution
    Res. Inst. for Electron. Components, Bucharest, Romania
  • fYear
    1995
  • fDate
    11-14 Oct 1995
  • Firstpage
    57
  • Lastpage
    60
  • Abstract
    Field emitter triodes (FETs) have usually the current produced and controlled by the gate voltage Vg. However, if the emitter is allowed to protrude through the gate opening, the emission current can be controlled by the anode voltage Va and the emitter-anode distance d. In this collector-assisted mode of operation the triode can be used as a pressure sensor allowing the anode to be mobile. The FET model used in this paper has parallel cathode, gate and anode planes, the gate having near the emitter a “volcano” shape. The emitter is conical with spherical tip. The emitter protrudes through the gate circular opening. The Laplace equation is solved numerically and the emission current is obtained through integration of the current density-electric field J(E) Fowler-Nordheim relationship over the emitter area. The constant voltage mode of operation was studied and the sensitivity of the FET pressure sensor as a function of the model parameters was derived. Under similar conditions referring to the gate, better sensor sensitivity is obtained for those situations which assure higher emission current I. Higher I is obtained for higher Va and emitter height h and also for smaller d, emitter opening angle φ and work function Φ
  • Keywords
    Laplace equations; current density; electron field emission; modelling; pressure sensors; sensitivity analysis; vacuum microelectronics; Fowler-Nordheim relationship; Laplace equation; anode voltage; collector-assisted operation mode; conical emitter; constant voltage mode; current density-electric field; emission current control; emitter-anode distance; field emitter triode; model; model parameters; pressure sensor; sensor sensitivity; Anodes; Bismuth; Cathodes; Current measurement; Diodes; FETs; Mercury (metals); Roentgenium; Shape; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.494863
  • Filename
    494863