Title :
A Simple Method for Fabricating Silicon Single Electron Devices for Metrology Applications
Author :
Hwang, G.J. ; Huang, C.F. ; Fang, Y.P. ; Chou, Y.C. ; Hu, S.F.
Author_Institution :
Center for Meas. Stand., Ind. Technol. Res. Inst., Hsinchu
Abstract :
A simple method, based on overlapping the dosage distribution of the discretely electron beam written nano-dots, was employed to fabricate silicon single electron transistor. The electronic characteristics of fabricated Si-based SET were analyzed, and found to be consistent with the expected behavior of electron transport through a gated quantum dot
Keywords :
semiconductor quantum dots; single electron transistors; electron beam; electron transport; metrology applications; quantum dot; silicon single electron devices; silicon single electron transistor; Capacitance; Electron beams; Laboratories; Metrology; Quantum dots; Semiconductor films; Silicon; Single electron devices; Single electron transistors; Standards development;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2004 Conference on
Conference_Location :
London
Print_ISBN :
0-7803-8494-6
Electronic_ISBN :
0-7803-8494-6
DOI :
10.1109/CPEM.2004.305355
