Title :
A new SPICE model for the reverse bias region of a semiconductor diode
Author :
Dobrescu, Dragos ; Rusu, Adrian
Author_Institution :
Politehnic Univ. of Bucharest, Romania
Abstract :
The paper presents a new analytical model for the reverse bias region of the current-voltage characteristic of a semiconductor diode. This model has the advantage that a single analytical function is used for modelling both the saturation and the regulation regions of the reverse biased diode. The function takes into account the real dependence of the reverse current IR versus the reverse applied voltage VR in the transition region (Zener “knee”) between the saturation and the regulation regions. This model is useful especially for the diodes having a soft breakdown
Keywords :
SPICE; electric breakdown; semiconductor device models; semiconductor device reliability; semiconductor diodes; SPICE model; analytical function; analytical model; current-voltage characteristic; regulation regions; reverse applied voltage; reverse bias region; reverse current; saturation regions; semiconductor diode; soft breakdown; transition region; Analytical models; Breakdown voltage; Differential equations; Electric breakdown; Electrons; Knee; SPICE; Semiconductor diodes; Statistics;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494867
