A new SPICE model for the reverse bias region of a semiconductor diode

Author

Dobrescu, Dragos ; Rusu, Adrian

Author_Institution

Politehnic Univ. of Bucharest, Romania

fYear

1995

fDate

11-14 Oct 1995

Firstpage

73

Lastpage

76

Abstract

The paper presents a new analytical model for the reverse bias region of the current-voltage characteristic of a semiconductor diode. This model has the advantage that a single analytical function is used for modelling both the saturation and the regulation regions of the reverse biased diode. The function takes into account the real dependence of the reverse current I_R versus the reverse applied voltage V_R in the transition region (Zener “knee”) between the saturation and the regulation regions. This model is useful especially for the diodes having a soft breakdown

Keywords

SPICE; electric breakdown; semiconductor device models; semiconductor device reliability; semiconductor diodes; SPICE model; analytical function; analytical model; current-voltage characteristic; regulation regions; reverse applied voltage; reverse bias region; reverse current; saturation regions; semiconductor diode; soft breakdown; transition region; Analytical models; Breakdown voltage; Differential equations; Electric breakdown; Electrons; Knee; SPICE; Semiconductor diodes; Statistics;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International

Conference_Location

Sinaia

Print_ISBN

0-7803-2647-4

Type

conf

DOI

10.1109/SMICND.1995.494867

Filename

494867