• DocumentCode
    3449359
  • Title

    Atomic structure and electron transport properties of glassy As2Se3:Snx

  • Author

    Andriesh, A. ; Popescu, M. ; Iovu, M. ; Verlan, V. ; Shutov, S. ; Bulgaru, M. ; Colomeyco, E. ; Malcov, S. ; Leonovici, M. ; Mihai, V. ; Steflea, M. ; Zamfira, S.

  • Author_Institution
    Inst. of Appl. Phys., Acad. of Sci., Kishinev, Moldova
  • fYear
    1995
  • fDate
    11-14 Oct 1995
  • Firstpage
    83
  • Lastpage
    86
  • Abstract
    According to X-ray diffraction, electrical conductivity and photoelectrical measurements, the evolution of the structure and of the physical properties of the glass system As2Se3:Sn x with the tin concentration is explained by the gradual entering of tin into the As2Se3 disordered layers and the formation of the three-dimensional network by cross-linking the layers
  • Keywords
    X-ray diffraction; arsenic compounds; chalcogenide glasses; diffusion; electrical conductivity; glass structure; photoelectricity; semiconductor doping; tin; As2Se3:Sn; X-ray diffraction; atomic structure; cross-linking; disordered layers; electrical conductivity; electron transport properties; glassy As2Se3:Snx; photoelectrical measurements; physical properties; three-dimensional network; Atomic measurements; Conductivity measurement; Doping; Electric variables measurement; Electrons; Glass; Photoconductivity; Temperature; Tin; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.494869
  • Filename
    494869
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3449359