Title :
Atomic structure and electron transport properties of glassy As2Se3:Snx
Author :
Andriesh, A. ; Popescu, M. ; Iovu, M. ; Verlan, V. ; Shutov, S. ; Bulgaru, M. ; Colomeyco, E. ; Malcov, S. ; Leonovici, M. ; Mihai, V. ; Steflea, M. ; Zamfira, S.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci., Kishinev, Moldova
Abstract :
According to X-ray diffraction, electrical conductivity and photoelectrical measurements, the evolution of the structure and of the physical properties of the glass system As2Se3:Sn x with the tin concentration is explained by the gradual entering of tin into the As2Se3 disordered layers and the formation of the three-dimensional network by cross-linking the layers
Keywords :
X-ray diffraction; arsenic compounds; chalcogenide glasses; diffusion; electrical conductivity; glass structure; photoelectricity; semiconductor doping; tin; As2Se3:Sn; X-ray diffraction; atomic structure; cross-linking; disordered layers; electrical conductivity; electron transport properties; glassy As2Se3:Snx; photoelectrical measurements; physical properties; three-dimensional network; Atomic measurements; Conductivity measurement; Doping; Electric variables measurement; Electrons; Glass; Photoconductivity; Temperature; Tin; X-ray diffraction;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494869
