DocumentCode :
3449404
Title :
Directional emission in strain-balanced quantum well solar cells
Author :
Adams, J.G.J. ; Roberts, J.S. ; Hill, G. ; Ekins-Daukes, N.J. ; Barnham, K.W.J.
Author_Institution :
Dept. of Phys., Imperial Coll. London, London, UK
fYear :
2009
fDate :
7-12 June 2009
Abstract :
The major loss mechanism in the strain-balanced quantum well solar cell is through radiative recombination in the quantum wells. This loss can be reduced through optical manipulation, as fundamentally the radiative emission need only occur in the direction of absorption. In strained quantum well systems, the valence band splits into heavy hole and light hole bands leading to the restriction of emission in the plane of the quantum wells. This suppression of the radiative recombination leads to a higher power conversion efficiency limit.
Keywords :
gallium arsenide; indium compounds; quantum well devices; semiconductor quantum wells; solar cells; valence bands; In0.23Ga0.77As; directional emission; heavy hole bands; light hole bands; optical manipulation; power conversion efficiency; radiative emission; radiative recombination; strain-balanced quantum well solar cell; valence band; Absorption; Distributed Bragg reflectors; Gallium arsenide; Optical losses; Photovoltaic cells; Radiative recombination; Reflectivity; Substrates; Tensile strain; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411734
Filename :
5411734
Link To Document :
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