• DocumentCode
    3449404
  • Title

    Directional emission in strain-balanced quantum well solar cells

  • Author

    Adams, J.G.J. ; Roberts, J.S. ; Hill, G. ; Ekins-Daukes, N.J. ; Barnham, K.W.J.

  • Author_Institution
    Dept. of Phys., Imperial Coll. London, London, UK
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Abstract
    The major loss mechanism in the strain-balanced quantum well solar cell is through radiative recombination in the quantum wells. This loss can be reduced through optical manipulation, as fundamentally the radiative emission need only occur in the direction of absorption. In strained quantum well systems, the valence band splits into heavy hole and light hole bands leading to the restriction of emission in the plane of the quantum wells. This suppression of the radiative recombination leads to a higher power conversion efficiency limit.
  • Keywords
    gallium arsenide; indium compounds; quantum well devices; semiconductor quantum wells; solar cells; valence bands; In0.23Ga0.77As; directional emission; heavy hole bands; light hole bands; optical manipulation; power conversion efficiency; radiative emission; radiative recombination; strain-balanced quantum well solar cell; valence band; Absorption; Distributed Bragg reflectors; Gallium arsenide; Optical losses; Photovoltaic cells; Radiative recombination; Reflectivity; Substrates; Tensile strain; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
  • Conference_Location
    Philadelphia, PA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-2949-3
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2009.5411734
  • Filename
    5411734