• DocumentCode
    3449415
  • Title

    Refractive index dispersion of a-Si1-xCx:H

  • Author

    Tomozeiu, N. ; Tomozeiu, Mariana

  • Author_Institution
    Fac. of Phys., Bucharest Univ., Romania
  • fYear
    1995
  • fDate
    11-14 Oct 1995
  • Firstpage
    91
  • Lastpage
    94
  • Abstract
    The refractive-index behavior (magnitude and dispersion) of a-Si 1-xCx:H undoped is presented. Using the single-effective-oscillator model, the dispersion energy Ed which is a measure of the strength of interband optical transitions, is found. Experimentally, is also pointed out the influence of the carbon content on the model parameters
  • Keywords
    amorphous semiconductors; hydrogen; refractive index; silicon compounds; stoichiometry; voids (solid); C content; SiC:H; a-Si1-xCx:H; interband optical transitions; refractive index dispersion; single-effective-oscillator model; voids; Amorphous materials; Argon; Dispersion; Frequency; Optical films; Optical refraction; Optical variables control; Oscillators; Polymer films; Refractive index;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.494871
  • Filename
    494871
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3449415