Determination of gap states density in PECVD a-Si:H from amorphous-crystalline heterojunctions

Author

Marsal, L.F. ; Pallares, J. ; Correig, X. ; Calderer, J. ; Alcubilla, R.

Author_Institution

Dept. d´´Eng. Electron., Univ. Rovira i Virgili, Tarragona, Spain

fYear

1995

fDate

11-14 Oct 1995

Firstpage

111

Lastpage

114

Abstract

The existence of space charge limited currents in n-type amorphous silicon on p-type crystalline silicon heterojunctions has been used to determine the density of states in the gap of the n type a-Si:H. In such a way an indicative measurement of the density of states can be routinely carried out when investigating the use of these heterojunctions in electronic devices. The results show that the localised states distribution can be approximated by an exponential distribution in the range of the scanned energies

Keywords

amorphous semiconductors; electronic density of states; elemental semiconductors; energy gap; hydrogen; p-n heterojunctions; plasma CVD coatings; silicon; space-charge-limited conduction; PECVD; Si:H-Si; amorphous-crystalline heterojunctions; density of states; gap state density; localised states distribution; n-type amorphous semiconductor; p-type crystalline semiconductor; space charge limited currents; Amorphous silicon; Capacitance; Capacitance-voltage characteristics; Density measurement; Frequency; Heterojunctions; Measurement techniques; Photoconductivity; Space charge; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International

Conference_Location

Sinaia

Print_ISBN

0-7803-2647-4

Type

conf

DOI

10.1109/SMICND.1995.494876

Filename

494876