Title :
Comparative study of integrated current sensors in n-channel IGBTs
Author :
Shen, Z. ; So, K.C. ; Chow, T.P.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
31 May-3 Jun 1994
Abstract :
Three types of integrated current sensors, which are referred to as active, bipolar, and MOS sensors, are studied for 600 V n-channel IGBTs. The MOS current sensor for vertical IGBTs is experimentally demonstrated for the first time. A comparative study of current sensing characteristics such as linearity, thermal stability, and dynamic response for the three device structures is conducted based on the modeling and experimental results. The basic device physics is discussed and some guidelines are provided for the design of IGBT integrated current sensors
Keywords :
insulated gate bipolar transistors; 600 V; MOS sensors; active sensors; bipolar sensors; dynamic response; integrated current sensors; linearity; modeling; n-channel IGBTs; thermal stability; vertical IGBTs; Charge carrier processes; Guidelines; Insulated gate bipolar transistors; Linearity; MOSFETs; Physics; Sensor phenomena and characterization; Temperature distribution; Temperature sensors; Thermal stability;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583654
