• DocumentCode
    3449514
  • Title

    Epitaxial relations in BaF2 films grown by MBE on Si(111) substrates

  • Author

    Belenchuk, A. ; Fedorov, A. ; Zenchenko, V. ; Lukash, V. ; Vasilyev, A.

  • Author_Institution
    Inst. of Appl. Phys., Acad. of Sci., Kishinev, Moldova
  • fYear
    1995
  • fDate
    11-14 Oct 1995
  • Firstpage
    117
  • Lastpage
    120
  • Abstract
    The dependence of the epitaxial orientations of the films in BaF 2/Si(111) heterostructures on growth conditions and the influence of heat treatment on the stability of epitaxial relations in such structures are investigated. The correlations between the types of epitaxial relations and structures of interface are also discussed
  • Keywords
    barium compounds; elemental semiconductors; epitaxial layers; heat treatment; interface structure; molecular beam epitaxial growth; semiconductor materials; semiconductor-insulator boundaries; silicon; BaF2-Si; MBE; Si; Si(111) substrates; epitaxial orientations; growth conditions; heat treatment; heterostructures; interface structure; semiconductor; Annealing; Conductive films; Electrons; Elementary particle vacuum; Molecular beam epitaxial growth; Semiconductor films; Spectroscopy; Substrates; Temperature; Vacuum systems;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.494877
  • Filename
    494877
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3449514