Development of silicon solar cells for six-junction tandem stack cells

Author

Zin, Ngwe Soe ; Blakers, Andrew ; Everett, Vernie

Author_Institution

Australian Nat. Univ., Canberra, ACT, Australia

fYear

2009

fDate

7-12 June 2009

Abstract

This paper presents the development of small (2.5Ã—8.0 mm²) silicon solar cells, to be used in a six-junction tandem device. PC1D, numerical modeling and quasi steady state photoconductance (QSSPC) measurement were used to predict the targeted efficiency of silicon solar cells. Early batch of cells had problems of shunting, series resistance and high carrier recombination. Various techniques - junction isolation, pin-hole analysis, diffusion drive-in, light-induced plating, lifetime degradation studies and implied-Voc - were used to improve the performance of the solar cells.

Keywords

diffusion; elemental semiconductors; isolation technology; photoconductive cells; semiconductor device metallisation; silicon; solar cells; Si; carrier recombination; drive-in diffusion; junction isolation; lifetime degradation; light-induced plating; numerical modeling; pin-hole analysis; quasisteady state photoconductance measurement; series resistance; shunting; silicon solar cells; six-junction tandem stack cells; Boron; Fabrication; Lighting; Metallization; Photovoltaic cells; Predictive models; Radiative recombination; Silicon; Surface resistance; Surface texture;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Conference_Location

Philadelphia, PA

ISSN

0160-8371

Print_ISBN

978-1-4244-2949-3

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2009.5411754

Filename

5411754