• DocumentCode
    3449580
  • Title

    The effect of radiation-induced reversible switching annealing

  • Author

    Pershenkov, V.S. ; Belyakov, V.V. ; Cherepko, S.V. ; Sogoyan, A.V. ; Rusanovschi, V.I. ; Sontea, V.P.

  • Author_Institution
    Moscow Eng. Phys. Inst., Russia
  • fYear
    1995
  • fDate
    11-14 Oct 1995
  • Firstpage
    129
  • Lastpage
    132
  • Abstract
    The kinetics of rechargeable radiation induced trap buildup is investigated in the thin gate oxide of an MOS structure. Experimental evidence is provided to show that the switching reversible annealing following irradiation is caused by filling and detrapping of the oxide shallow electron traps
  • Keywords
    MIS structures; MOSFET; annealing; electron traps; radiation effects; radiation hardening (electronics); semiconductor device models; semiconductor-insulator boundaries; switching; MOS structure; Si-SiO2; kinetics; oxide shallow electron traps; radiation-induced reversible switching annealing; rechargeable radiation induced trap buildup; thin gate oxide; Annealing; Bonding; Electron traps; Filling; Hardware design languages; Kinetic theory; Length measurement; Physics; Threshold voltage; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.494880
  • Filename
    494880
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3449580