Title :
Nanotube based Vertical Nano-devices for High Integration Density
Author :
Jang, J.E. ; Cha, S.N. ; Choi, Y. ; Kang, D.J. ; Butler, T.P. ; Hasko, D.G. ; Jung, J.E. ; Kim, J.M. ; Amaratunga, G.A.J.
Author_Institution :
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, U.K., E-mail: jej32@cam.ac.uk Tel: +44-1223-766767 Fax: +44-1223-766767
Abstract :
Various nano-devices based on vertical nanotubes were developed. Carbon nanotubes (CNTs) were employed as a functional part or a nano structure of a nanoelectromechanical (NEM) switch, nano-capacitor, and NEM-dynamic random access memory (DRAM). The unique vertical structure of nanotubes allows high integration density for devices.
Keywords :
Carbon nanotubes; Electrodes; Electrostatics; Nanoscale devices; Nanostructures; Nanotechnology; Nickel; Random access memory; Scanning electron microscopy; Switches;
Conference_Titel :
Emerging Technologies - Nanoelectronics, 2006 IEEE Conference on
Print_ISBN :
0-7803-9357-0
DOI :
10.1109/NANOEL.2006.1609695
