Title :
Turn-off analysis of the IGBT used in ZCS mode
Author :
Lefebvre, S. ; Forest, F. ; Calmon, F. ; Chante, S.P.
Author_Institution :
LESIR, CNRS, Cachan, France
fDate :
31 May-3 Jun 1994
Abstract :
This paper presents a study of the behaviour of PT and NPT IGBT in Zero Current Switching mode. Simulations allow one to estimate the stored charge during turn-off cycle in this switching mode. We observe and we explain how to reduce turn-off losses by action on the gate drive, or by the choice of the device technology
Keywords :
insulated gate bipolar transistors; IGBT; ZCS mode; device technology; gate drive; nonpunch-through devices; punch-through devices; stored charge; turn-off analysis; zero current switching; Bipolar transistors; Charge carrier lifetime; Circuit testing; Diodes; Inductors; Insulated gate bipolar transistors; Switches; Temperature; Voltage; Zero current switching;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583662
