DocumentCode
3449588
Title
Turn-off analysis of the IGBT used in ZCS mode
Author
Lefebvre, S. ; Forest, F. ; Calmon, F. ; Chante, S.P.
Author_Institution
LESIR, CNRS, Cachan, France
fYear
1994
fDate
31 May-3 Jun 1994
Firstpage
99
Lastpage
104
Abstract
This paper presents a study of the behaviour of PT and NPT IGBT in Zero Current Switching mode. Simulations allow one to estimate the stored charge during turn-off cycle in this switching mode. We observe and we explain how to reduce turn-off losses by action on the gate drive, or by the choice of the device technology
Keywords
insulated gate bipolar transistors; IGBT; ZCS mode; device technology; gate drive; nonpunch-through devices; punch-through devices; stored charge; turn-off analysis; zero current switching; Bipolar transistors; Charge carrier lifetime; Circuit testing; Diodes; Inductors; Insulated gate bipolar transistors; Switches; Temperature; Voltage; Zero current switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location
Davos
ISSN
1063-6854
Print_ISBN
0-7803-1494-8
Type
conf
DOI
10.1109/ISPSD.1994.583662
Filename
583662
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