• DocumentCode
    3449606
  • Title

    Influence of wafer quality on cell performance

  • Author

    Carnel, L. ; Hjemås, P.C. ; Lu, T. ; Nyhus, J. ; Helland, K. ; Gjerstad, O.

  • Author_Institution
    R&D Dept., REC Scanwafer, Porsgrunn, Norway
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Abstract
    This presentation will show how an improved understanding of multicrystalline wafer quality can explain the variations in cell performance across multicrystalline silicon blocks. Using infrared scanning a silicon block was sorted out with precipitates in the middle of the block. Photoluminescence combined with defect etching revealed needle-like precipitates along the grain boundaries. The precipitations lead to reduced shunt resistance. In the middle of the block numerous crystallographic defects were identified that lower the current collection and the final cell efficiency.
  • Keywords
    crystal defects; elemental semiconductors; etching; grain boundaries; photoluminescence; precipitation; silicon; solar cells; Si; cell performance; crystallographic defects; current collection; defect etching; grain boundaries; infrared scanning; multicrystalline silicon blocks; multicrystalline wafer quality; needle-like precipitates; photoluminescence; shunt resistance; Costs; Etching; Gettering; Grain boundaries; Photoluminescence; Photovoltaic cells; Production; Research and development; Silicon; Solar energy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
  • Conference_Location
    Philadelphia, PA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-2949-3
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2009.5411761
  • Filename
    5411761