DocumentCode
3449606
Title
Influence of wafer quality on cell performance
Author
Carnel, L. ; Hjemås, P.C. ; Lu, T. ; Nyhus, J. ; Helland, K. ; Gjerstad, O.
Author_Institution
R&D Dept., REC Scanwafer, Porsgrunn, Norway
fYear
2009
fDate
7-12 June 2009
Abstract
This presentation will show how an improved understanding of multicrystalline wafer quality can explain the variations in cell performance across multicrystalline silicon blocks. Using infrared scanning a silicon block was sorted out with precipitates in the middle of the block. Photoluminescence combined with defect etching revealed needle-like precipitates along the grain boundaries. The precipitations lead to reduced shunt resistance. In the middle of the block numerous crystallographic defects were identified that lower the current collection and the final cell efficiency.
Keywords
crystal defects; elemental semiconductors; etching; grain boundaries; photoluminescence; precipitation; silicon; solar cells; Si; cell performance; crystallographic defects; current collection; defect etching; grain boundaries; infrared scanning; multicrystalline silicon blocks; multicrystalline wafer quality; needle-like precipitates; photoluminescence; shunt resistance; Costs; Etching; Gettering; Grain boundaries; Photoluminescence; Photovoltaic cells; Production; Research and development; Silicon; Solar energy;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location
Philadelphia, PA
ISSN
0160-8371
Print_ISBN
978-1-4244-2949-3
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2009.5411761
Filename
5411761
Link To Document