Title :
Computer simulation and design optimization of IGBT´s in soft-switching converters
Author :
Widjaja, I. ; Kurnia, A. ; Divan, D. ; Shenai, K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
fDate :
31 May-3 Jun 1994
Abstract :
The next generation of power semiconductor devices will be designed and optimized to meet the specific application requirements. Resonant dc link concept is gaining wide popularity in a range of soft-switching applications because of superior power conversion efficiency and improved overall system reliability. Mixed-mode simulations are used to study the carrier dynamics in non punchthrough IGBT structures during turn-off under soft- and hard-switching conditions. The simulation results are shown to qualitatively predict the measured bump in the tail current with varying output dv/dt conditions
Keywords :
insulated gate bipolar transistors; IGBTs; design optimization; hard-switching conditions; nonpunchthrough structures; output dv/dt conditions; power conversion efficiency; power semiconductor devices; resonant dc link concept; soft-switching converters; system reliability; tail current; Application software; Computer simulation; Current measurement; Design optimization; Insulated gate bipolar transistors; Power conversion; Power semiconductor devices; Predictive models; Reliability; Resonance;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583664
