Title :
Passivation of monoatomic and compound semiconductors by GeOx Ny film
Author :
Jishiashvili, D. ; Kutelia, E. ; Dzhanelidze, R. ; Shiolashvili, Z. ; Gobronidze, A.
Author_Institution :
Inst. of Cybern., Acad. of Sci., Tbilisi, Georgia
Abstract :
C-V characteristics of Al/GeOxNy/GaAs(Ge) metal-insulator-semiconductor (MIS) structures have been measured in the frequency range of 1 kHz-1 MHz. The density of the interface states was found to be as low as (5-8)×1010 cm-2 eV-1. There is no evidence of Fermi level pinning, and surface carrier inversion is clearly demonstrated. The pyrolytic GeOxNy film is recommended for high quality GaAs and Ge MIS device fabrication
Keywords :
III-V semiconductors; MIS structures; aluminium; electronic density of states; elemental semiconductors; gallium arsenide; germanium; germanium compounds; interface states; inversion layers; passivation; semiconductor materials; semiconductor-insulator boundaries; 1 kHz to 1 MHz; Al-GeON-GaAs; Al-GeON-Ge; C-V characteristics; GaAs; Ge; MIS device fabrication; MIS structures; interface states; passivation; pyrolytic GeOxNy film; semiconductors; surface carrier inversion; Amorphous materials; Artificial intelligence; Capacitance-voltage characteristics; Frequency measurement; Gallium arsenide; Interface states; Passivation; Propellants; Semiconductor films; Voltage;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494884
