• DocumentCode
    3449670
  • Title

    The photoluminescence in electrochemically oxidized porous silicon

  • Author

    Popescu, Mihai ; Chumash, Valentin ; Cojocaru, Ion ; Zamfira, Sorin ; Jain, V.K. ; Gupta, Amta

  • Author_Institution
    Inst. of Phys. & Technol. of Mater., Bucharest, Romania
  • fYear
    1995
  • fDate
    11-14 Oct 1995
  • Firstpage
    151
  • Lastpage
    154
  • Abstract
    Some oxidized porous silicon samples exhibit an amorphous phase with the approximate composition SiO1.6. The particular features of the photoluminescence spectra were tentatively ascribed to the contribution of the interface between silicon and the non-stoichiometric oxide
  • Keywords
    elemental semiconductors; oxidation; photoluminescence; porous materials; semiconductor materials; semiconductor technology; silicon; Si; Si-SiO; SiO1.6; amorphous phase; electrochemical oxidation; nonstoichiometric oxide; photoluminescence; porous silicon; semiconductor; Amorphous materials; Microstructure; Optical films; Oxidation; Photoluminescence; Physics; Silicon; Stimulated emission; Temperature measurement; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.494885
  • Filename
    494885
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3449670