Title :
Monte Carlo model of charge-state distributions for electron cyclotron resonance ion source plasmas
Author :
Edgell, D.H. ; Kim, J.S. ; Wong, S.K. ; Pardo, R.C. ; Vondrasek, R.
Author_Institution :
Fartech Inc., San Diego, CA, USA
Abstract :
A computer model for an Electron Cyclotron Resonance Ion Source (ECRIS) plasma is under development that currently incorporates non-Maxwellian distribution functions, multiple atomic species, and ion confinement due to the ambipolar potential that arises from fast electrons. Atomic processes incorporated into the model include multiple ionization and multiple charge-exchange with rate coefficients calculated for non-Maxwellian distributions. The electron distribution function is calculated using a Fokker-Planck code with an ECR heating term. The Monte Carlo method is used to calculate the charge-state distribution (CSD) of the ions. The Monte Carlo ion tracking is verified by CSD comparison with a conventional 0-D fluid model, similar to Shirkov´s (1992). The Monte Carlo method is chosen for future extension to a 1-D axial model. Axial variations in the plasma parameters could affect confinement, CSD and extraction. The electron Fokker-Planck code is to be extended to 1-D axial by bounce-averaging
Keywords :
Fokker-Planck equation; Monte Carlo methods; cyclotron resonance; ion sources; plasma transport processes; ECR heating term; Fokker-Planck code; Monte Carlo ion tracking; Monte Carlo model; ambipolar potential; bounce-averaging; charge-state distribution; charge-state distributions; electron cyclotron resonance ion source plasmas; electron distribution function; ion confinement; multiple charge-exchange; multiple ionization; nonMaxwellian distribution functions; plasma parameters; Cyclotrons; Distributed computing; Distribution functions; Electrons; Ion sources; Ionization; Monte Carlo methods; Plasma confinement; Plasma sources; Resonance;
Conference_Titel :
Particle Accelerator Conference, 1999. Proceedings of the 1999
Conference_Location :
New York, NY
Print_ISBN :
0-7803-5573-3
DOI :
10.1109/PAC.1999.794294