Forward blocking characteristics of SOI power devices at high temperatures

Author

Constapel, Rainer ; Korec, Jacek

Author_Institution

Res. Inst. Frankfurt, Daimler-Benz AG, Frankfurt

fYear

1994

fDate

31 May-3 Jun 1994

Firstpage

117

Lastpage

121

Abstract

The forward blocking characteristics of lateral power devices on SOI-substrate are analyzed using two-dimensional numerical device simulation and compared with measurements of LIGBT and LDMOS devices. The critical influence of different emitter structures on the leakage current and breakdown voltage of the LIGBT are discussed in detail. Sketching the trade-off between forward blocking and on-state voltage drop, it will be shown, that a LIGBT with convenient shorted anode can have a similar blocking characteristic compared to the LDMOS without sacrificing its superior on-state behaviour, even at temperatures up to 225°C

Keywords

insulated gate bipolar transistors; 175 to 225 degC; LDMOS devices; LIGBT; SOI power devices; breakdown voltage; emitter structures; forward blocking characteristics; lateral power devices; leakage current; on-state voltage drop; shorted anode; two-dimensional numerical device simulation; Anodes; Dielectrics; Leakage current; Numerical simulation; Semiconductor films; Shape; Silicon; Space charge; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on

Conference_Location

Davos

ISSN

1063-6854

Print_ISBN

0-7803-1494-8

Type

conf

DOI

10.1109/ISPSD.1994.583669

Filename

583669