Thermal behaviour of lateral power devices on SOI substrates

Author

Neubrand, H. ; Constapel, R. ; Boot, R. ; Fullmann, M. ; Boose, A.

Author_Institution

Res. Inst. Frankfurt, Daimler-Benz AG, Frankfurt, Germany

fYear

1994

fDate

31 May-3 Jun 1994

Firstpage

123

Lastpage

127

Abstract

Simulated temperature distributions for SOI-structures with various film thicknesses for different operating conditions (on state, turn-off and pulse overload) and different SOI sheet thicknesses (20 μm, 5 μm) are presented and discussed. The temperature increase was in the range between 5 K and 400 K. The calculated results have been verified experimentally for a fabricated device. An important result is the reduced pulse overload capacity of thin SOI-devices in the 10 μs to 100 μs range. Consequences for application of SOI-devices are discussed

Keywords

insulated gate bipolar transistors; 10 to 100 mus; 20 micron; 5 micron; 5 to 400 K; IGBTs; SOI substrates; SOI-devices; film thicknesses; lateral power devices; on state; operating conditions; pulse overload capacity; sheet thicknesses; simulated temperature distributions; turn-off; Anodes; Electrothermal effects; Insulated gate bipolar transistors; Molecular beam epitaxial growth; Silicon compounds; Substrates; Temperature distribution; Temperature measurement; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on

Conference_Location

Davos

ISSN

1063-6854

Print_ISBN

0-7803-1494-8

Type

conf

DOI

10.1109/ISPSD.1994.583671

Filename

583671