Title :
Thermal behaviour of lateral power devices on SOI substrates
Author :
Neubrand, H. ; Constapel, R. ; Boot, R. ; Fullmann, M. ; Boose, A.
Author_Institution :
Res. Inst. Frankfurt, Daimler-Benz AG, Frankfurt, Germany
fDate :
31 May-3 Jun 1994
Abstract :
Simulated temperature distributions for SOI-structures with various film thicknesses for different operating conditions (on state, turn-off and pulse overload) and different SOI sheet thicknesses (20 μm, 5 μm) are presented and discussed. The temperature increase was in the range between 5 K and 400 K. The calculated results have been verified experimentally for a fabricated device. An important result is the reduced pulse overload capacity of thin SOI-devices in the 10 μs to 100 μs range. Consequences for application of SOI-devices are discussed
Keywords :
insulated gate bipolar transistors; 10 to 100 mus; 20 micron; 5 micron; 5 to 400 K; IGBTs; SOI substrates; SOI-devices; film thicknesses; lateral power devices; on state; operating conditions; pulse overload capacity; sheet thicknesses; simulated temperature distributions; turn-off; Anodes; Electrothermal effects; Insulated gate bipolar transistors; Molecular beam epitaxial growth; Silicon compounds; Substrates; Temperature distribution; Temperature measurement; Thermal conductivity; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583671
