DocumentCode
3449880
Title
High frequency electrical characteristics of thermally grown SiO 2 films on ⟨0001⟩ p-type 6H-SiC
Author
Fernandez, J. ; Godignon, P. ; Berberich, S. ; Rebollo, J. ; Brezeanu, G. ; Millán, J.
Author_Institution
Centro Nacional de Microelectron., CSIC, Barcelona, Spain
fYear
1995
fDate
11-14 Oct 1995
Firstpage
187
Lastpage
190
Abstract
This paper presents the high frequency electrical characteristics of SiO2 films on p-type 6H-SiC ⟨0001⟩ Si. MOS capacitors were fabricated for this purpose. The oxide was thermally grown in dry conditions as on Si-substrates. The capacitors were characterised to evaluate the quality of the SiO2 layer. The experimental C-V characteristics show a hysterisis effect which is more important when the sample is UV light exposed. The dielectric losses and the frequency response have also been analysed
Keywords
MOS capacitors; dielectric hysteresis; dielectric losses; insulating thin films; semiconductor materials; semiconductor-insulator boundaries; silicon compounds; MOS capacitors; SiC; SiO2; dielectric losses; experimental C-V characteristics; frequency response; high frequency electrical characteristics; hysterisis effect; p-type 6H-SiC; thermally grown SiO2 films; thermally grown in dry conditions; Capacitance; Capacitance-voltage characteristics; Electric variables; Electron traps; Frequency; Lighting; Oxidation; Silicon carbide; Surface cleaning; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location
Sinaia
Print_ISBN
0-7803-2647-4
Type
conf
DOI
10.1109/SMICND.1995.494894
Filename
494894
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