Investigation of the surface morphology of P-doped LPCVD silicon films

Author

Plugaru, R. ; Cosmin, P. ; Cosmin, S. ; Vasile, E. ; Cobianu, C. ; Dascalu, D.

Author_Institution

Inst. of Microtechnol., Bucharest, Romania

fYear

1995

fDate

11-14 Oct 1995

Firstpage

191

Lastpage

194

Abstract

The surface morphology of LPCVD silicon films as a function of P doping concentration has been investigated. The films were deposited in the amorphous phase at 550°C and in the polycrystalline phase at 620°C and were P doped at 1.5×10²⁰ cm^-3, 1×10²⁰ cm^-3 and 9×10¹⁹ cm ^-3 concentrations. SEM and EDX observations showed that hillocks of pure silicon are formed on the film surface. Their size increases as the phosphorus concentration increases, the variations being more significant for the amorphous phase deposited films

Keywords

CVD coatings; X-ray chemical analysis; amorphous semiconductors; doping profiles; elemental semiconductors; phosphorus; scanning electron microscopy; semiconductor doping; semiconductor thin films; silicon; surface chemistry; surface topography; 550 C; 620 C; EDX; P-doped LPCVD silicon films; SEM; Si:P; Si:P film; ace morphology; amorphous phase; hillocks; polycrystalline phase; semiconductor; Amorphous materials; Annealing; Atmosphere; Doping; Integrated circuit technology; Scanning electron microscopy; Semiconductor films; Silicon; Surface morphology; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International

Conference_Location

Sinaia

Print_ISBN

0-7803-2647-4

Type

conf

DOI

10.1109/SMICND.1995.494895

Filename

494895