DocumentCode :
3450077
Title :
Improvement of the breakdown voltage of GaAs-FETs using low-temperature-grown GaAs insulator
Author :
Thomas, H. ; Luo, J.K. ; Morgan, D.V. ; Westwood, D. ; Lipka, K. ; Splingart, E. ; Kohn, E.
Author_Institution :
ELSYM Dept., Univ. of Wales Coll. of Cardiff, UK
fYear :
1994
fDate :
31 May-3 Jun 1994
Firstpage :
155
Lastpage :
160
Abstract :
An as-grown GaAs layer grown by molecular beam epitaxy at low temperature (LT-) has been used as an insulator for power GaAs field effect transistors (MISFETs). It was found that the LT-GaAs layer successfully passivates the surface, of GaAs-FETs, eliminates the hysterisis of drain-source current, and improves the breakdown behaviour. The breakdown voltage, VBD, for MISFETs is as high as 40-50 V for 2 μm spacing between the gate and drain contacts, and is independent of the doping-thickness product. VBD also exhibits an increase on decrease of temperature, and suggests a high breakdown voltage in the high frequency domain. It is the particular electrical properties of the as-grown LT-GaAs layer which are found to be responsible for the superior properties of the LT-GaAs MISFETs. The LT-GaAs layer exhibits ohmic behaviour which leads to a linear distribution of electric field between the gate and drain. The dominant hopping conduction eliminates the concentration of injected electrons, while the high breakdown field of the LT-GaAs layer ensures a high breakdown voltage of LT-GaAs MISFETs
Keywords :
gallium arsenide; 40 to 50 V; GaAs; MBE layer; MISFET; breakdown voltage; electric field linear distribution; electrical properties; high breakdown field; hopping conduction; low-temperature-grown GaAs insulator; molecular beam epitaxy; ohmic behaviour; passivation; power field effect transistors; Contacts; Electric breakdown; Electrons; FETs; Frequency domain analysis; Gallium arsenide; Insulation; MISFETs; Molecular beam epitaxial growth; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
ISSN :
1063-6854
Print_ISBN :
0-7803-1494-8
Type :
conf
DOI :
10.1109/ISPSD.1994.583686
Filename :
583686
Link To Document :
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