Compact Super-Junction MOSFET model considering the specific potential distribution due to 2-fold resistance

A compact Super-Junction MOSFET model is reported. The model describes all device performances based on the potential distribution calculated by solving the Poisson equation and the current continuity between channel and resistive drift region. The main focus is given on describing the resistance effect in the drift region, where the current flow is first parallel to the surface and then changes into the vertical direction to the bottom drain contact. It is demonstrated here that the accurate description of the resistance effect automatically leads to accurate I-V characteristics and also accurate capacitances, enabling accurate prediction of SJ-MOSFET circuit performances.