DocumentCode :
3450108
Title :
A new power MOSFET model and an easy to use characterization tool using device datasheet
Author :
Fang Wang ; Kher, Sanjay ; Fichtner, Torsten ; Aurich, Joachim
Author_Institution :
R&D, Electron. Bus. Unit, Ansys Inc., USA
fYear :
2013
fDate :
23-26 June 2013
Firstpage :
1
Lastpage :
5
Abstract :
In this paper, we present a new power MOSFET model and an easy to use characterization tool which extracts model parameters from data available in device datasheets. The model has a good balance between accuracy and ease of parameter extraction, and covers both static and dynamic characterization. The extraction flow is streamlined with a user friendly interface. The simulation results from the extracted model are validated with datasheet results, and a good accuracy of +/-5% has been achieved.
Keywords :
power MOSFET; device datasheets; dynamic characterization; easy to use characterization tool; extraction flow; parameter extraction; power MOSFET model; static characterization; user friendly interface; Capacitance; Data models; Integrated circuit modeling; MOSFET; Parameter extraction; Semiconductor device modeling; Switches; MOSFET; circuit simulation; computational modeling; power device; power electronics; semiconductor device model; software package;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Control and Modeling for Power Electronics (COMPEL), 2013 IEEE 14th Workshop on
Conference_Location :
Salt Lake City, UT
ISSN :
1093-5142
Print_ISBN :
978-1-4673-4914-7
Type :
conf
DOI :
10.1109/COMPEL.2013.6626471
Filename :
6626471
Link To Document :
بازگشت