A new power MOSFET model and an easy to use characterization tool using device datasheet

Author

Fang Wang ; Kher, Sanjay ; Fichtner, Torsten ; Aurich, Joachim

Author_Institution

R&D, Electron. Bus. Unit, Ansys Inc., USA

fYear

2013

fDate

23-26 June 2013

Firstpage

1

Lastpage

5

Abstract

In this paper, we present a new power MOSFET model and an easy to use characterization tool which extracts model parameters from data available in device datasheets. The model has a good balance between accuracy and ease of parameter extraction, and covers both static and dynamic characterization. The extraction flow is streamlined with a user friendly interface. The simulation results from the extracted model are validated with datasheet results, and a good accuracy of +/-5% has been achieved.

Keywords

power MOSFET; device datasheets; dynamic characterization; easy to use characterization tool; extraction flow; parameter extraction; power MOSFET model; static characterization; user friendly interface; Capacitance; Data models; Integrated circuit modeling; MOSFET; Parameter extraction; Semiconductor device modeling; Switches; MOSFET; circuit simulation; computational modeling; power device; power electronics; semiconductor device model; software package;

fLanguage

English

Publisher

ieee

Conference_Titel

Control and Modeling for Power Electronics (COMPEL), 2013 IEEE 14th Workshop on

Conference_Location

Salt Lake City, UT

ISSN

1093-5142

Print_ISBN

978-1-4673-4914-7

Type

conf

DOI

10.1109/COMPEL.2013.6626471

Filename

6626471