An improved model of high-voltage power LDMOSFET and its usage in multi-objective optimization of radio-frequency amplifiers

In the paper, a set of improvements of the semiempirical MOSFET model is suggested to ensure required accuracy for simulating power electronic circuits. The enhancement of the precision was arranged by incorporating the more accurate Grove-Frohman equations into the semiempirical model because the contemporary short-channel-oriented models BSIM and EKV are inappropriate for characterizing the power transistors. The ability of the modified model to characterize power devices was confirmed by successful processes of extracting its parameters for medium- and high-power transistors, and a demonstration of this process for an SIPMOS power transistor is also shown in the paper. Finally, a multi-objective optimization of a C-class radio-frequency power amplifier with LDMOSFET is demonstrated as well as an analogous procedure for a low-noise preamplifier. In the two examples in time and frequency domains, resulting three-and two-dimensional Pareto fronts are presented in convenient graphic forms for a comfortable selection of a tradeoff by a user.