Title :
Theory of the excess carrier recombination processes in heterostructures of type II
Author :
Zegrya, G.G. ; Andreev, Andrey D.
Author_Institution :
A.F. Ioffe Phys.-Tech. Inst. of RAS, St. Petersburg, Russia
Abstract :
The mechanism of Auger recombination (AR) in type II heterostructures has been investigated theoretically for the first time. It is shown that the AR rate is a power function of temperature rather than an exponential one as in bulk materials. The possibility of suppression of the AR process is demonstrated for the first time
Keywords :
Auger effect; electron-hole recombination; semiconductor heterojunctions; Auger recombination mechanism; Auger recombination suppression; excess carrier recombination processes; type II heterostructures; Charge carrier processes; Conducting materials; Electrons; Matrices; Optical devices; Optical materials; Optoelectronic devices; Radiative recombination; Spontaneous emission; Temperature;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494910
