DocumentCode
3450190
Title
Theory of the excess carrier recombination processes in heterostructures of type II
Author
Zegrya, G.G. ; Andreev, Andrey D.
Author_Institution
A.F. Ioffe Phys.-Tech. Inst. of RAS, St. Petersburg, Russia
fYear
1995
fDate
11-14 Oct 1995
Firstpage
253
Lastpage
256
Abstract
The mechanism of Auger recombination (AR) in type II heterostructures has been investigated theoretically for the first time. It is shown that the AR rate is a power function of temperature rather than an exponential one as in bulk materials. The possibility of suppression of the AR process is demonstrated for the first time
Keywords
Auger effect; electron-hole recombination; semiconductor heterojunctions; Auger recombination mechanism; Auger recombination suppression; excess carrier recombination processes; type II heterostructures; Charge carrier processes; Conducting materials; Electrons; Matrices; Optical devices; Optical materials; Optoelectronic devices; Radiative recombination; Spontaneous emission; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location
Sinaia
Print_ISBN
0-7803-2647-4
Type
conf
DOI
10.1109/SMICND.1995.494910
Filename
494910
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