Title :
A new IGBT structure with a wider safe operating area (SOA)
Author :
Thaper, N. ; Baliga, B.J.
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
fDate :
31 May-3 Jun 1994
Abstract :
A new IGBT structure incorporating a shallow diverter between adjacent cells is proposed in this paper with the aim of widening the Forward Bias Safe Operating Area (FBSOA) of the IGBT. The latchup limit of the IGBT increased from 700 A/cm2 to 1100 A/cm2 in case of the n-channel IGBT and from 1200 A/cm2 to 2100 A/cm2 for the p-channel IGBT. Although there was a no improvement in the dynamic avalanche limit in the case of the p-channel IGBT, it improved significantly for the n-channel IGBT making its FBSOA much wider than that of the conventional IGBT. The incorporation of the diverter was found to result in an increase in the forward voltage drop (at a current density of 200 A/cm2) from 1.7 V to 2.3 V and -2.3 V to -3.9 V for the n- and the p-channel IGBT, respectively
Keywords :
insulated gate bipolar transistors; -3.9 to 2.3 V; IGBT structure; dynamic avalanche limit; forward voltage drop; forward-biased SOA; latchup limit; n-channel IGBT; p-channel IGBT; safe operating area; shallow diverter; Avalanche breakdown; Current density; Electron emission; Insulated gate bipolar transistors; Metallization; Motor drives; Semiconductor optical amplifiers; Switching circuits; Threshold voltage; Thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583697
