• DocumentCode
    3450329
  • Title

    HfO2Nano-thin Films Grown by Laser MBE for Gate Dielectric Application

  • Author

    Lu, Y.K. ; Zhu, W. ; Zhang, Y. ; Lu, Hai-Han ; Gopalkrishnan, R. ; Zhu, Wei ; Zhang, Ye ; Lu, Hai-Han ; Gopalkrishnan, R.

  • Author_Institution
    Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
  • fYear
    2006
  • fDate
    10-13 Jan. 2006
  • Firstpage
    273
  • Lastpage
    277
  • Abstract
    High-k hafnium oxide thin films with equivalent of thickness (EOT) to SiO2of about 1 – 2 nm were deposited on p-type
  • Keywords
    Argon; Dielectrics; Electrons; Hafnium oxide; Laser ablation; Molecular beam epitaxial growth; Pulsed laser deposition; Rapid thermal annealing; Semiconductor films; Substrates; Hafnium oxide; gate dielectrics; laserMBE;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Emerging Technologies - Nanoelectronics, 2006 IEEE Conference on
  • Print_ISBN
    0-7803-9357-0
  • Type

    conf

  • DOI
    10.1109/NANOEL.2006.1609728
  • Filename
    1609728
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3450329