Title :
On the leverage of high fT transistors for advanced high-speed bipolar circuits
Author :
Chuang, C.T. ; Chin, K. ; Stork, J.M.C. ; Patton, G.L. ; Crabbe, E.F. ; Comfort, J.H.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The authors present a detailed study on the leverage of high-f T transistors for advanced high-speed bipolar circuit applications. It is shown that, for the standard ECL (emitter coupled logic) circuit, the leverage of high fT is limited by the passive resistors (emitter-follower resistor and collector load resistor) and wire delay, especially in the low-power regime. For the standard NTL circuit, the leverage is higher due to its front-end configuration and lower power supply value. As the passive resistors are decoupled from the delay path in various advanced circuits utilizing active-pull-down schemes, the leverage of high fT becomes more significant
Keywords :
bipolar integrated circuits; bipolar transistors; emitter-coupled logic; integrated circuit technology; integrated logic circuits; NTL circuit; active-pull-down schemes; collector load resistor; emitter coupled logic; emitter-follower resistor; front-end configuration; high-speed bipolar circuits; high-speed digital circuits; leverage of high fT transistors; passive resistors; wire delay; Bipolar transistor circuits; Bipolar transistors; Boron; Capacitance; Delay effects; Heterojunction bipolar transistors; Power supplies; Resistors; Tunneling; Wire;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0103-X
DOI :
10.1109/BIPOL.1991.160973
