• DocumentCode
    3450377
  • Title

    Zn diffusion in III-V semiconductor compounds (InP, GaAs, InGaAs, InAlAs, GaAlAs) from polymer spin-on films

  • Author

    Kamanin, A.V. ; Merkulov, A.V. ; Mintairov, A.M. ; Mokina, I.A. ; Shmidt, N.M. ; Busygina, L.A. ; Yurre, T.A.

  • Author_Institution
    A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
  • fYear
    1995
  • fDate
    11-14 Oct 1995
  • Firstpage
    293
  • Lastpage
    296
  • Abstract
    Zn diffusion from polymer spin-on films into III-V semiconductor compounds has been investigated. The Zn distribution profiles have been found to depend on a relation between the concentration of Zn introduced in the near-surface region of a semiconductor and its solubility limit. A change of AlxGa1-xAs composition occurred during the Zn diffusion
  • Keywords
    III-V semiconductors; diffusion; doping profiles; polymer films; semiconductor doping; zinc; GaAlAs:Zn; GaAs:Zn; III-V semiconductor compounds; InAlAs:Zn; InGaAs:Zn; InP:Zn; Zn diffusion; composition; distribution profiles; polymer spin-on films; solubility; Atomic layer deposition; Atomic measurements; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Optical microscopy; Polymer films; Semiconductor films; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.494919
  • Filename
    494919
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3450377