Title :
InxGa1-xSb of highly uniform composition
Author :
Manea, A.S. ; Munteanu, I. ; Losofatu, M. ; Lazarescu, M.F. ; Cruceru, Madalina ; Grigorescu, Cristiana
Author_Institution :
Inst. of Phys. & Technol. of Mater., Bucharest, Romania
Abstract :
This paper reports on InxGa1-xSb (x=0.20) bulk crystals of uniform composition obtained by rapid, direct synthesis from the elements. The uniformity of the composition has been checked out by Neutron Activation Analysis (NAA). Hall effect and specific resistance measurements have been performed within the temperature range of 77 K-310 K. For all the investigated samples p-type conductivity results
Keywords :
Hall effect; III-V semiconductors; crystal growth from melt; electrical conductivity; gallium arsenide; indium compounds; neutron activation analysis; semiconductor growth; 77 to 310 K; Hall effect; InxGa1-xSb bulk crystals; InGaSb; compositional uniformity; direct synthesis; neutron activation analysis; p-type conductivity; specific resistance; Composite materials; Crystalline materials; Crystallization; Epitaxial growth; Isotopes; Neutrons; Semiconductor materials; Semiconductor thin films; Substrates; Temperature;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494920
