DocumentCode
3450438
Title
Modelling and analysis of Porous Silicon Photonic Crystals
Author
Patel, P. N. ; Mishra, Vivekanand
Author_Institution
Electronics Engineering Department, S. V. National Institute of Technology, Surat-395007, Gujarat, India
fYear
2012
fDate
19-21 Dec. 2012
Firstpage
1
Lastpage
4
Abstract
Recently, Porous Silicon (PS) is emerged as novel and unique material for the optoelectronic applications. In this work, modelling and analysis of one dimensional (1D) Photonic Crystals (PC) using PS is reported and these elements are suggested as the optical sensor device structures. Modelling is relying on the Bruggeman´s Effective Medium Approximation (BEMA) and the Transfer Matrix Method (TMM) to design and predict the optical properties of 1D-PSPC structures. Wavelength shift (Δλ) in the reflectance spectrum is analyzed for the critical design parameters such as refractive index of void, layer thickness, layer porosity and refractive index of substrate. The engineering data reported are useful for the design of complex optoelectronic applications.
fLanguage
English
Publisher
ieee
Conference_Titel
Emerging Technology Trends in Electronics, Communication and Networking (ET2ECN), 2012 1st International Conference on
Conference_Location
Surat, Gujarat, India
Print_ISBN
978-1-4673-1628-6
Type
conf
DOI
10.1109/ET2ECN.2012.6470058
Filename
6470058
Link To Document