• DocumentCode
    3450438
  • Title

    Modelling and analysis of Porous Silicon Photonic Crystals

  • Author

    Patel, P. N. ; Mishra, Vivekanand

  • Author_Institution
    Electronics Engineering Department, S. V. National Institute of Technology, Surat-395007, Gujarat, India
  • fYear
    2012
  • fDate
    19-21 Dec. 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Recently, Porous Silicon (PS) is emerged as novel and unique material for the optoelectronic applications. In this work, modelling and analysis of one dimensional (1D) Photonic Crystals (PC) using PS is reported and these elements are suggested as the optical sensor device structures. Modelling is relying on the Bruggeman´s Effective Medium Approximation (BEMA) and the Transfer Matrix Method (TMM) to design and predict the optical properties of 1D-PSPC structures. Wavelength shift (Δλ) in the reflectance spectrum is analyzed for the critical design parameters such as refractive index of void, layer thickness, layer porosity and refractive index of substrate. The engineering data reported are useful for the design of complex optoelectronic applications.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Emerging Technology Trends in Electronics, Communication and Networking (ET2ECN), 2012 1st International Conference on
  • Conference_Location
    Surat, Gujarat, India
  • Print_ISBN
    978-1-4673-1628-6
  • Type

    conf

  • DOI
    10.1109/ET2ECN.2012.6470058
  • Filename
    6470058