• DocumentCode
    3450511
  • Title

    LPCVD SiO2 layers prepared from SiH4 and O 2 at 450°C in a RTP

  • Author

    Cobianu, Cornel ; Rem, Jan Bart ; Klootwijk, Johan H. ; Weusthof, Marcel H H ; Holleman, Jisk ; Woerlee, Pierre H.

  • Author_Institution
    Inst. of Microtechnol., Bucharest, Romania
  • fYear
    1995
  • fDate
    11-14 Oct 1995
  • Firstpage
    319
  • Lastpage
    322
  • Abstract
    In this paper experimental results of the silane oxidation kinetics in a rapid thermal low pressure chemical vapor deposition (RTLPCVD) cold wall reactor at 450°C are presented. The kinetics of SiO2 film preparation is mainly controlled by a threshold partial pressure of silane which determines a sharp transition from no film formation to a high deposition rate
  • Keywords
    chemical vapour deposition; insulating thin films; oxidation; rapid thermal processing; silicon compounds; 450 C; LPCVD; RTP; SiH4; SiO2; SiO2 films; cold wall reactor; deposition rate; partial pressure; rapid thermal low pressure chemical vapor deposition; silane oxidation kinetics; Annealing; Chemical vapor deposition; Electrons; Gases; Heating; Inductors; Kinetic theory; Nitrogen; Oxidation; Thermal loading;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.494925
  • Filename
    494925
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3450511